document number: 94382 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 03-nov-09 1 phase control thyristors (stud version), 180 a 180rki...pbf, 181rki...pbf series vishay high power products features ? hermetic glass-metal seal ? international standard case to-209ab (to-93) ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 180 a to-209ab (to-93) major ratings and characteristics parameter test conditions values units i t(av) 180 a t c 80 c i t(rms) 285 a i tsm 50 hz 3800 60 hz 4000 i 2 t 50 hz 72 ka 2 s 60 hz 66 v drm /v rrm 400 to 1000 v t q typical 100 s t j - 40 to 125 c voltage ratings part number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma 180rki 181rki 40 400 500 30 80 800 900 100 1000 1100
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94382 2 revision: 03-nov-09 180rki...pbf, 181rki...pbf series vishay high power products phase control thyristors (stud version), 180 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 180 a 80 c maximum rms on-state current i rms dc at 79 c case temperature 285 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, intial t j = t j maximum 3800 t = 8.3 ms 4000 t = 10 ms 100 % v rrm reapplied 3500 t = 8.3 ms 3660 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 72 ka 2 s t = 8.3 ms 66 t = 10 ms 100 % v rrm reapplied 61 t = 8.3 ms 56 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 720 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.83 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 0.89 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.92 m high level value of on-state slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.81 maximum on-state voltage v tm i pk = 570 a, t j = t j maximum, t p = 10 ms sine pulse 1.35 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum non-repeti tive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 300 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 50 a, t j = t j maximum, di/dt = 10 a/s, v r = 100 v, dv/dt = 20 v/s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm, i drm t j = t j maximum rated v drm /v rrm applied 30 ma
document number: 94382 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 03-nov-09 3 180rki...pbf, 181rki...pbf series phase control thyristors (stud version), 180 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p 5 ms 10 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positi ve gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 130 - ma t j = 25 c 65 150 t j = 125 c 35 - dc gate voltage required to trigger v gt t j = - 40 c 2.0 - v t j = 25 c 1.2 2.5 t j = 125 c 0.9 - dc gate current not to trigger i gd t j = t j maximum maximum gate curre nt/voltage not to trigger is the maximum value which will not trig ger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.15 k/w maximum thermal resistance, junction to ambient r thcs mounting surface, smooth, flat and greased 0.04 mounting force, 10 % non-lubricated threads 31 (275) n m (lbf in) lubricated threads 24.5 (210) approximate weight 280 g case style see dimensions - link at the end of datasheet to-209ab (to-93) r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.050 0.032 t j = t j maximum k/w 120 0.063 0.059 90 0.080 0.082 60 0.118 0.124 30 0.225 0.228
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94382 4 revision: 03-nov-09 180rki...pbf, 181rki...pbf series vishay high power products phase control thyristors (stud version), 180 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics maximum allowa b le case temperature (c) average on- s tate current (a) 80 140 180 40 120 60 20 100 160 200 0 130 120 110 100 90 80 70 30 60 90 120 180 ? conduction angle r thjc (dc) = 0.15 k/w 94382_01 maximum allowa b le case temperature (c) average on- s tate current (a) 50 100 200 150 250 300 0 70 80 90 100 110 120 130 30 60 dc 90 120 180 r thjc (dc) = 0.15 k/w conduction period ? 94382_02 maximum average on- s tate power loss (w) average on- s tate current (a) 40 80 120 140 160 180 0 60 100 20 240 220 200 180 160 140 120 100 80 60 40 20 0 ? conduction angle t j = 125 c rm s limit 180 120 90 60 30 94382_03a maximum average on- s tate power loss (w) maximum allowa b le am b ient temperature (c) 25 50 75 100 125 0 240 220 200 180 160 140 120 100 80 60 40 20 0 94382_03b 2 k/w 1.5 k/w 1 k/w 0.8 k/w 0.6 k/w 0.3 k/w 0.2 k/w r th s a = 0.1 k/w - r maximum average on- s tate power loss (w) average on- s tate current (a) 100 200 300 0 150 250 50 350 300 250 200 150 100 50 0 94382_04a dc 180 120 90 60 30 rm s limit t j = 125 c conduction period ? maximum average on- s tate power loss (w) maximum allowa b le am b ient temperature (c) 25 50 75 100 125 0 350 300 250 200 150 100 50 0 94382_04b 2 k/w 1.5 k/w 1 k/w 0.8 k/w 0.6 k/w 0.3 k/w 0.2 k/w r th s a = 0.1 k/w - r
document number: 94382 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 03-nov-09 5 180rki...pbf, 181rki...pbf series phase control thyristors (stud version), 180 a vishay high power products fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics peak half s ine wave on- s tate current (a) num b er of equal amplitu d e half cycle current pulses (n) 10 100 1 1500 2000 2500 3500 3000 4000 94382_05 at any rated load condition and with rated v rrm applied following s urge. initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half s ine wave on- s tate current (a) pulse train duration (s) 0.1 1 0.01 1500 2000 2500 3500 3000 4000 94382_06 maximum non-repetitive s urge current ver s u s pul s e train duration. control of conduction may not be maintained. initial t j = 125 c no voltage reapplied rated v rrm reapplied instantaneous on- s tate current (a) instantaneous on- s tate voltage (v) 0.5 1.0 1.5 2.0 2.5 3.0 100 10 000 1000 t j = 125 c t j = 25 c 94382_07 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 s quare wave pulse duration (s) z thjc - transient thermal impe d ance (k/w) 94382_08 s teady s tate value r thjc = 0.15 k/w (dc operation)
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94382 6 revision: 03-nov-09 180rki...pbf, 181rki...pbf series vishay high power products phase control thyristors (stud version), 180 a fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 94382_09 instantaneous g ate current (a) instantaneous g ate voltage (v) 0.01 0.1 1 10 1000 100 rectangular gate pul s e (a) recommended load line for rated di/dt: 20 v, 30 , t r 0.5 s , t p 6 s (b) recommended load line for 30 % rated di/dt: 15 v, 40 , t r 1 s , t p 6 s (b) (a) v g d i g d (1) p g m = 12 w, t p = 5 m s (2) p g m = 30 w, t p = 2 m s (3) p g m = 60 w, t p = 1 m s (4) p g m = 200 w, t p = 300 s (1) (2) (3) (4) fre q uency limited by p g (av) t j = 25 c t j = 125 c t j = 40 c 1 -i t(av) rated average output current (rounded/10) 3 - thyristor 4 - voltage code x 10 = v rrm (see voltage ratings table) device code 5 13 24 18 1 rki 100 pbf 5 - none = standard production pbf = lead (pb)-free 2 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) links to related documents dimensions www.vishay.com/doc?95077
document number: 95077 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 19-may-10 1 to-209ab (to-93) outline dimensions vishay semiconductors dimensions in millimeters (inches) fa s t-on terminal s white gate red s hrink red cathode red s ilicon rubber c. s . 0.51 mm 2 (0.0008 s .i.) ? 4.3 (0.17) 19 (0.75) max. ? 8.5 (0.33) gla ss metal s eal ? 28.5 (1.12) max. s w 32 c. s . 35 mm 2 (0.054 s .i.) flexible lead 3/4"-16unf-2a white s hrink amp. 280000-1 ref-250 238.5 10 (9.39 0.39) 35 (1.38) max. 21 (0.83) max. 28.5 (1.12) max. 16 (0.63) max. 75 (2.95) min. 213.5 10 (8.41 0.39) 23 min. 4 max. 0 to 15 38 max.
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